Monolayer and bilayer graphene field effect transistor using Verilog-A

Conductance modulation of charged lipid bilayer using electrolyte-gated graphene-field effect transistor

Graphene is an attention-grabbing material in electronics, physics, chemistry, and even biology because of its unique properties such as high surface-area-to-volume ratio. Also, the ability of graphene-based materials to continuously tune charge carriers from holes to electrons makes them promising for biological applications, especially in lipid bilayer-based sensors. Furthermore, changes in c...

A disorder induced field effect transistor in bilayer and trilayer graphene.

We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to...

Channel Length Modulation Effect on Monolayer Graphene Nanoribbon Field Effect Transistor

Unconventional fractional quantum Hall effect in monolayer and bilayer graphene

The commensurability condition is applied to determine the hierarchy of fractional fillings of Landau levels in monolayer and in bilayer graphene. The filling rates for fractional quantum Hall effect (FQHE) in graphene are found in the first three Landau levels in one-to-one agreement with the experimental data. The presence of even denominator filling fractions in the hierarchy for FQHE in bil...

Graphene Nano-Ribbon Field Effect Transistor under Different Ambient Temperatures

This paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (GNRFET). The results illustrate that the GNRFET under high temperature (HT-GNRFET) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay product co...