Monolayer and bilayer graphene field effect transistor using Verilog-A

نویسندگان

چکیده

Monolayer and bilayer graphene field effect transistor modeling is presented in this paper. The transport model incorporated, works well for both drift diffusive ballistic conditions. validity of the was checked various device dimensions bias voltages. Performance parameters affecting operation region are optimized. Model developed to verify transfer characteristics monolayer transistor. Results obtained prove ambipolar property Graphene. MATLAB used numerical systematic performance evaluation graphene. tool simulate cadence Verilog-A which describe analog component structure.

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ژورنال

عنوان ژورنال: International Journal of Reconfigurable & Embedded Systems (IJRES)

سال: 2021

ISSN: ['2089-4864', '2722-2608']

DOI: https://doi.org/10.11591/ijres.v10.i1.pp56-64